![]() A C–V profile as generated on nanoHUB for bulk MOSFET with different oxide thicknesses. This information is used throughout the semiconductor production chain, and begins with evaluating epitaxially grown crystals, including parameters such as average doping concentration, doping profiles, and carrier lifetimes.Ĭ–V measurements can reveal oxide thickness, oxide charges, contamination from mobile ions, and interface trap density in wafer processes. Reliability engineers also use these measurements to qualify the suppliers of the materials they use, to monitor process parameters, and to analyze failure mechanisms.Ī multitude of semiconductor device and material parameters can be derived from C–V measurements with appropriate methodologies, instrumentation, and software. These measurements are extremely valuable to product and yield enhancement engineers who are responsible for improving processes and device performance. For example, researchers use them in university and semiconductor manufacturers' labs to evaluate new processes, materials, devices, and circuits. These measurements' fundamental nature makes them applicable to a wide range of research tasks and disciplines. However, C–V measurements are also widely used to characterize other types of semiconductor devices and technologies, including bipolar junction transistors, JFETs, III–V compound devices, photovoltaic cells, MEMS devices, organic thin-film transistor (TFT) displays, photodiodes, and carbon nanotubes (CNTs). Many researchers use capacitance–voltage (C–V) testing to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures. Measurements may be done at DC, or using both DC and a small-signal AC signal (the conductance method, ), or using a large-signal transient voltage. The dependence of the depletion width upon the applied voltage provides information on the semiconductor's internal characteristics, such as its doping profile and electrically active defect densities. By varying the voltage applied to the junction it is possible to vary the depletion width. The depletion region with its ionized charges inside behaves like a capacitor. The technique uses a metal– semiconductor junction ( Schottky barrier) or a p–n junction or a MOSFET to create a depletion region, a region which is empty of conducting electrons and holes, but may contain ionized donors and electrically active defects or traps. The applied voltage is varied, and the capacitance is measured and plotted as a function of voltage. Technique for characterizing semiconductor materials and devicesĬapacitance–voltage profiling (or C–V profiling, sometimes CV profiling) is a technique for characterizing semiconductor materials and devices.
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